Airfast RF Power GaN Transistor

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：209.82 Kbytes 页数：13 Pages

恩XP

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High terminal impedances for optimal broadband performance  Advanced high performance in--package Doherty  Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 页数：18 Pages

恩XP

Airfast RF Power GaN Transistor

Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver • Optimized for massive MIMO active antenna systems for 5G base stations

文件：209.78 Kbytes 页数：13 Pages

恩XP

RF Power LDMOS Transistor

文件：690.68 Kbytes 页数：8 Pages

恩XP

Standard Thick Film Chip Resistors

Stability at different environmental conditions ΔR/R ≤ 1 % (1000 h rated power at 70 °C)\n2 mm pitch packaging option for 0603 size\nAEC-Q200 qualified;

Vishay

威世

Package：0805（2012 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 3.3 OHM 1% 1/8W 0805

Vishay Dale

Package：0805（2012 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 3.3 OHM 1% 1/8W 0805

Vishay Dale

Lead (Pb)-free Thick Film, Rectangular Commodity Chip Resistors

High volume product suitable for commercial applications\nStability (ΔR/R ≤ 1 % for 1000 h at 70 °C)\nLead (Pb)-free solder contacts on Ni barrier layer;

Vishay

威世

Package：0805（2012 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES 3.3 OHM 1% 1/8W 0805

Vishay Dale