Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performance is guaranteed for ap

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恩XP

Package：0805（2012 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 2.2 OHM 5% 1/8W 0805

Vishay Dale

Package：0805（2012 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 2.2 OHM 5% 1/8W 0805

Vishay Dale

Lead (Pb)-free Thick Film, Rectangular Commodity Chip Resistors

High volume product suitable for commercial applications\nStability (ΔR/R ≤ 1 % for 1000 h at 70 °C)\nLead (Pb)-free solder contacts on Ni barrier layer;

Vishay

威世

Pulse Proof, High Power Thick Film Chip Resistors

Excellent pulse load capability\nEnhanced power rating\nDouble side printed resistor element;

Vishay

威世

Package：0805（2012 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 2.2 OHM 5% 1/2W 0805

Vishay Dale