Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip

Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip PROCESS DETAILS Die Size 105 x 105 MILS Die Thickness 8.5 MILS Base Bonding Pad Area 32 x 19 MILS Emitter Bonding Pad Area 28 x 22 MILS Top Side Metalization Al

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CENTRAL

包装：散装 类别：电缆，电线 多芯导线 描述：55A0142-20-MST4CS2275

TE Connectivity Aerospace, Defense and Marine

Square Type

Square Type □ 3.9 mm × 1.75 mm Series

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PANASONIC

松下

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

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MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 2A • Low Collect

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NTE