30.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：1.01593 Mbytes 页数：3 Pages

THINKISEMI

思祁半导体

30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

文件：1.01614 Mbytes 页数：3 Pages

THINKISEMI

思祁半导体

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE25P60K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-50A RDS(ON)

文件：752.4 Kbytes 页数：7 Pages

NCEPOWER

新洁能

P-Channel Power MOSFET

General Features Vps =-60V,Ip =-25A Rds(on)

文件：1.14507 Mbytes 页数：7 Pages

RECTRON

丽正国际

P-Channel Power MOSFET

General Features Vps =-60V,Ip =-25A Rds(on)

文件：1.45375 Mbytes 页数：7 Pages

RECTRON

丽正国际