8-Bit CMOS ROM Based Microcontrollers with 1k or 2k

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美国国家半导体美国国家半导体公司

Programmable Unijunction Transistor

PROCESS DETAILS Process PLANAR PASSIVATED Die Size 27.5 x 27.5 MILS Die Thickness 11 MILS Anode Bonding Pad Area 7.1 x 5.1 MILS Cathode Bonding Pad Area 7.1 x 5.1 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 13,000Å

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Green-Power Current Mode PWM Power Switch

文件：272.37 Kbytes 页数：10 Pages

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Peaking Coils - Radial

文件：176.32 Kbytes 页数：1 Pages

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