ISF1267

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

KTA1267

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity :hFE(0.1mA)/hFE(2mA)=0.95(Typ.). •LowNoise:NF=1dB(Typ.),10dB(Max.). •ComplementarytoKTC3199.

KTA1267

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:0.4W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

KTA1267

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features ExcellenthFElinearity,lownoise,complementarypairwithKTC3199. Applications Generalpurposeandswitchingapplication.

KTA1267

TO-92SPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●ExcellenthFELinearity ●ComplementarytoKTC3199

KTA1267-GR

PNPGeneralPurposeApplication

KTA1267-GR

PNPGeneralPurposeApplication

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •ExcellenthFELinearity:hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) •LowNoise:NF=1.0dB(Typ.),10dB(Max.) •ComplementarytoKTC3199 •Marking:A1267 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Le

KTA1267L

EPITAXIALPLANARPNPTRANSISTOR(LOWNOISEAMPLIFIER)

LOWNOISEAMPLIFIERAPPLICATION. FEATURES •ExcellenthFELinearity:hFE(0.1mA)/hFE(2mA)=0.95(Typ.). •LowNoise:NF=0.2dB(Typ.),3dB(Max.). •ComplementarytoKTC3199L

KTA1267-O

PNPGeneralPurposeApplication

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •ExcellenthFELinearity:hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) •LowNoise:NF=1.0dB(Typ.),10dB(Max.) •ComplementarytoKTC3199 •Marking:A1267 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Le

KTA1267-O

PNPGeneralPurposeApplication