Intel AtomTM E680/E640 Processor Core-Express Module

文件：479.05 Kbytes 页数：2 Pages

PROTECHSYSTEMS

南京资讯

Small Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.6 X 3.6 MILS Emitter Bonding Pad Area 3.6 X 3.6 MILS Top Side Metalization Al

文件：210.5 Kbytes 页数：2 Pages

CENTRAL

Small Signal Transistors PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.6 X 3.6 MILS Emitter Bonding Pad Area 3.6 X 3.6 MILS Top Side Metalization Al

文件：192.23 Kbytes 页数：2 Pages

CENTRAL

CONVERTA BOX

文件：39.96 Kbytes 页数：1 Pages

BUD