CNY171SR2VM中文资料安森美半导体数据手册PDF规格书

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of

a gallium arsenide infrared emitting diode coupled with an NPN

phototransistor in a dual in−line package.

Features

 High BVCEO: 70 V Minimum

(CNY17XM, CNY17FXM, MOC8106M)

 Closely Matched Current Transfer Ratio (CTR) Minimizes

Unit−to−Unit Variation

 Current Transfer Ratio In Select Groups

 Very Low Coupled Capacitance Along With

No Chip−to−Pin 6 Base Connection for Minimum Noise

Susceptibility (CNY17FXM, MOC8106M)

 Safety and Regulatory Approvals:

 UL1577, 4,170 VACRMS for 1 Minute

 DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage

Applications

 Power Supply Regulators

 Digital Logic Inputs

 Microprocessor Inputs

 Appliance Sensor Systems

 Industrial Controls