SILICON PLANAR EPITAXIAL TRANSISTORS

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CDIL

SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

Power Transistor PNP - High Current Transistor Chip

PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 106 x 106 MILS Die Thickness 12 MILS Base Bonding Pad Area 25 x 33 MILS Emitter Bonding Pad Area 30 x 36 MILS Top Side Metalization Al - 50,000Å Back Side Metalization Ag - 10,000Å

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Central

Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier

CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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CDIL

Designing with thermally protected TMOV Varistors in TVSS Applications

Introduction Metal Oxide Varistors (MOVs) are commonly used to suppress transients in many applications such as: Transient Voltage Surge Suppressors (TVSS), Uninterruptible Power Supplies (UPS), AC Power Taps, AC Power Meters or other products. Lightning, inductive load switching, or capacitor ba

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