FDD6035AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=46A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

FDD6035AL

N-channelEnhancementModePowerMOSFET

Features VDS=30V,ID=80A RDS(ON)

FDP6035AL

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp

FDP6035AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=120V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

FDP6035L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FDP6035L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

FQ6035

AllQuartzSMDCrystal

FQ6035A

AllQuartzSMDCrystal

FQ6035B

AllQuartzSMDCrystal

FST6035

SchottkyPowerMod

●SchottkyBarrierRectifier ●GuardRingforReverseProtection ●VRRM35to50Volts ●Highsurgecapacity ●ReverseEnergyTested ●ROHSCompliant