FMBT3904

NPNGeneralPurposeTransistorCollector-EmitterVoltageVCEO

NPNGeneralPurposeTransistor

FMBT3904W

SMDNPNTransistor

200mASiliconNPNEpitaxialPlanarTransistor Features •Highcollector-emitterbreakdienvoltage.(BVCEO=40V@IC=1mA) •Smallloadswitchtransistorwithhighgainandlowstaurationvoltage,isdesignedforgeneralpurposeamflifierandswitchingapplicationsatcollectorcurrent. •Capable

FMMT3904

SOT23NPNSILICONPLANARSWITCHINGTRANSISTORS

FN3904G

N-ChannelEnhancementMOSFET

Features VDS=30V,ID=100A RDS(ON)=3.4mΩ@VGS=10V(Typ.) RDS(ON)=5.0mΩ@VGS=4.5V(Typ.) HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

FTC3904H

GeneralPurposeTransistors

FTK3904

30VN-ChannelMOSFETs

FTK3904Z

30VN-ChannelMOSFETs

GL3904

NPNEPITAXIALPLANARTRANSISTO

Description TheGL3904isdesignedforgeneralpurposeswitchingandamplifierapplications. Features Collector-EmitterVoltage:VCEO=40V ComplementarytoGL3906

GL3904

NPNEPITAXIALPLANARTRANSISTOR

GM3904

SOT-23