MOS

CMOS

场效应

200V N-Channel MOSFET

文件：684.2 Kbytes 页数：8 Pages

Fairchild

仙童半导体

200V N-Channel MOSFET

文件：942.24 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=52A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =49mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：328.77 Kbytes 页数：2 Pages

ISC

无锡固电