NP100N04PUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP100N04PUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4700pFTYP.(VDS=25V) •Designedforautomotiveapplicat

NP100N04PUK

ProductScoutAutomotive

NP100N04PUK

MOSFIELDEFFECTTRANSISTOR

Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

PJD100N04

40VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

PJD100N04-AU

40VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

VNH100N04

?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

■LINEARCURRENTLIMITATION ■THERMALSHUTDOWN ■SHORTCIRCUITPROTECTION ■INTEGRATEDCLAMP ■LOWCURRENTDRAWNFROMINPUTPIN ■DIAGNOSTICFEEDBACKTHROUGHINPUTPIN ■ESDPROTECTION ■DIRECTACCESSTOTHEGATEOFTHEPOWERMOSFET(ANALOGDRIVING) ■COMPATIBLEWITHSTAND

VNW100N04

?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET