首页 >CMDSPLF2407>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤26mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthroughholemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. •Surfa | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | LUCKY-LIGHT Lucky Light Electronic | LUCKY-LIGHT | ||
SurfaceMount(IRFR2407) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET짰PowerMOSFET Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
ADVANCEDPROCESSTECHNLOLGY | IRF International Rectifier | IRF | ||
SurfaceMount Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
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