HVMOS

采用多层外延制造工艺和独特结构设计的超结MOS，产品具有比常规MOSFET更快的开关速度及更柔和的开关曲线，在低开关损耗的同时也抑制了开关震荡，提高系统效率、降低发热量，简化系统的EMC设计。基于其高效率、低温升的特点，特别适用于快速充电器、LED电源、通讯、服务器电源、电动车充电桩、车载电源系统等系统应用。

ICM

创芯微微电子

MOSFET Silicon N-Channel MOS

Applications Boost PFC switch, single-ended flyback or two-transistor forward topologies. PD Adaptor, LCD & PDP TV and LED lighting. Features Low drain-source on-resistance: RDS(ON) = 0.50Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.8 to 4.2 V

文件：2.59914 Mbytes 页数：14 Pages

SY

顺烨电子

MOSFET Silicon N-Channel MOS

Applications Boost PFC switch, single-ended flyback or two-transistor forward topologies. PD Adaptor, LCD & PDP TV and LED lighting. Features Low drain-source on-resistance: RDS(ON) = 0.50Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.8 to 4.2 V

文件：2.59914 Mbytes 页数：14 Pages

SY

顺烨电子

MOSFET Silicon N-Channel MOS

Applications Boost PFC switch, single-ended flyback or two-transistor forward topologies. PD Adaptor, LCD & PDP TV and LED lighting. Features Low drain-source on-resistance: RDS(ON) = 0.50Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.8 to 4.2 V

文件：2.59914 Mbytes 页数：14 Pages

SY

顺烨电子