HVMOS

采用多层外延制造工艺和独特结构设计的超结MOS，产品具有比常规MOSFET更快的开关速度及更柔和的开关曲线，在低开关损耗的同时也抑制了开关震荡，提高系统效率、降低发热量，简化系统的EMC设计。基于其高效率、低温升的特点，特别适用于快速充电器、LED电源、通讯、服务器电源、电动车充电桩、车载电源系统等系统应用。

ICM

创芯微微电子

500V,5A N-Channel MOSFET

文件：289.99 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-CHANNEL POWER MOSFET

文件：242.88 Kbytes 页数：6 Pages

UTC

友顺

N-Channel MOSFET 500V, 4A, 1.4廓

Description UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitabl

文件：503.18 Kbytes 页数：8 Pages

Fairchild

仙童半导体