CLIPLITE CMC 285 MOUNT

文件：119.17 Kbytes 页数：1 Pages

VCC

Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip

PROCESS DETAILS Die Size 105 x 105 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 32 x 22 MILS Emitter Bonding Pad Area 33 x 24 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)

文件：37.2 Kbytes 页数：1 Pages

CENTRAL

SILICON GENERAL PURPOSE DIODE AXIAL LEAD

SILICON GENERAL PURPOSE DIODE AXIAL LEAD FEATURES General lPurpose , Industrial, Military And Space Application , Hermetically Sealed Glass With A Stud On Either Side Of The Glass Passivated Chip Provides Excellent Stability Extremely Low Leakave And Very High Reliability.

文件：146.47 Kbytes 页数：3 Pages

CDIL

Netz-Dioden-Modul Rectifier Diode Module

Rectifier Diode Module

文件：241.7 Kbytes 页数：10 Pages

EUPEC