ME-8112

EnclosedBasicSwitch

Features BasicswitchwithPlasticcoverandZincalloybottomenclosure. Dust,water,andoilresistant StrainreliefsuitableforSJT18/418AWGcables Fieldadjustableactuatorheads Recognition(s) CE–EN60947 UL–UL-508 CCC–GB14048.5-2008 RoHSCompliant ReachUna

ME-8112-P

EnclosedBasicSwitch

Features BasicswitchwithPlasticcoverandZincalloybottomenclosure. Dust,water,andoilresistant StrainreliefsuitableforSJT18/418AWGcables Fieldadjustableactuatorheads Recognition(s) CE–EN60947 UL–UL-508 CCC–GB14048.5-2008 RoHSCompliant ReachUna

ME-8112-PT

EnclosedBasicSwitch

Features BasicswitchwithPlasticcoverandZincalloybottomenclosure. Dust,water,andoilresistant StrainreliefsuitableforSJT18/418AWGcables Fieldadjustableactuatorheads Recognition(s) CE–EN60947 UL–UL-508 CCC–GB14048.5-2008 RoHSCompliant ReachUna

MOC8112

6-PinDIPOptoisolatorsTransistorOutput(NoBaseConnection)

6-PinDIPOptoisolatorsTransistorOutput(NoBaseConnection) TheMOC8111,MOC8112andMOC8113devicesconsistofagalliumarsenideinfraredemittingdiodeopticallycoupledtoamonolithicsiliconphototransistordetector.Theinternalbase–to–Pin6connectionhasbeeneliminatedforimprovedn

MOC8112

PHOTOTRANSISTOROPTOCOUPLERS

MOC8112

PHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheMOC811XseriesconsistsofaGalliumArsenideIREDcoupledwithanNPNphototransistor.Thebaseofthetransistorisnotbondedtoanexternalpinforimprovednoiseimmunity FEATURES •Highisolationvoltage 5300VACRMS—1minute •HighBVCEOminimum70Volts •Currentt

MOC8112

6-PINDIPOPTOCOUPLERSFORPOWERSUPPLYAPPLICATIONS(NOBASECONNECTION)

MOC8112

NON-BASELEADOPTICALLYCOUPLEDISOLATORPHOTOTRANSISTOROUTPUT

DESCRIPTION TheMOC8111,MOC8112,MOC8113seriesofopticallycoupledisolatorsconsistofinfraredlightemittingdiodeandNPNsiliconphototransistorinastandard6pindualinlineplasticpackagewiththebasepinunconnected. FEATURES •Options:- 10mmleadspread-addGafterpart

MOC8112

Optocoupler,PhototransistorOutput,NoBaseConnection

DESCRIPTION TheMOC8111/MOC8112isanoptocouplerconsistingofagalliumarsenideinfraredemittingdiodeopticallycoupledtoasiliconplanarphototransistordetectorinaplasticplug-inDIP6pinpackage.Thecouplingdeviceissuitableforsignaltransmissionbetweentwoelectricallysepar

MOC8112M

6-PinDIPOptocouplerforPowerSupplyApplications(NoBaseConnection)

Description TheMOC811XMseriesconsistsofaGalliumArsenideIREDcoupledwithanNPNphototransistor.Thebaseofthetransistorisnotbondedtoanexternalpinforimprovednoiseimmunity. Features ■Highisolationvoltage 7500VACPeak—1second ■HighBVCEOminimum70Volts ■Curren