CM6312

耳机放大IC;

CIM

CPH6312

High-SpeedSwitchingApplications

Features •LowON-resistance. •High-speedswitching. •4Vdrive.

DM6312P

MAGNETICPOWDERCORES

DNB6312

RectifierDiode

FEATURES ■DoubleSideCooling ■HighSurgeCapability APPLICATIONS ■Rectification ■FreewheelDiode ■DCMotorControl ■PowerSupplies ■Welding ■BatteryChargers

FDC6312P

DualP-Channel1.8VPowerTrenchSpecifiedMOSFET

GeneralDescription TheseP-Channel1.8VspecifiedMOSFETsareproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •–2.3A,–20V.

FDC6312P

DualP-Channel20V(D-S)MOSFET

FDC6312P

DualP-Channel20V(D-S)MOSFET

Features Vps=-20V,Ip=-3A Ros(on)=120mQ@Ves=-2.5V(Typ) Ros(on)=85mQ@Ves=-4.5V(Typ) HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage

HL6312G

AlGaInPLaserDiodes

HL6312G

AlGaInPLaserDiodes

ISL6312

Four-PhaseBuckPWMControllerwithIntegratedMOSFETDriversforIntelVR10,VR11,andAMDApplications