CX2059

BROADBAND:RF&WIRELESS

RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal

D2059

SiliconNPNPowerTransistors

DTC2059

P-Channel20V(D-S)MOSFET

DTC2059

P-Channel20V(D-S)MOSFETLoadSwitch

EPC2059

EnhancementModePowerTransistor

IRPT2059A

PowerModulefor2hpMotorDrives

TheIRPT2059APowerModule TheIRPT2059Apowermodule,showninfigure1,isachipandwireepoxyencapsulatedmodule.Ithousesinputrectifiers,brakeIGBTandfreewheelingdiode,outputinverter,currentsenseshuntsandNTCthermistor.The3-phaseinputbridgerectifiersareratedat800V.T

ISGM2059

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=3.2V@IC=82A ·HighPowerDensity ·LowGateDriveRequirement APPLICATIONS ·UninterruptedPowerSupply ·MotorDrives ·PFCCircuits ·WeldingMachines ·SMPS

KTD2059

TRIPLEDIFFUSEDNPNTRANSISTOR(GENERALPURPOSE)

GENERALPURPOSEAPPLICATION. FEATURES •ComplementarytoKTB1367.

KTD2059

SiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) •CollectorPowerDissipation- :PC=30W@TC=25℃ •LowCollectorSaturationVoltage- :VCE(sat)=2.0V(Max)@(IC=4A,IB=0.4A) •ComplementtoTypeKTB1367 APPLICATIONS •Designedforgeneralpurposeapplic

KTD2059

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) •CollectorPowerDissipation- :PC=30W@TC=25℃ •LowCollectorSaturationVoltage- :VCE(sat)=2.0V(Max)@(IC=4A,IB=0.4A) •ComplementtoTypeKTB1367 APPLICATIONS •Designedforgeneralpurposeapplic