CLL3H0914LS-700数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The CLL3H0914L-700 and CLL3H0914LS-700 are 700 W internally pre-matched RF GaN-SiC HEMTs power transistors that are usable in the frequency range from 0.9 GHz to 1.4 GHz. The devices offer excellent efficiency, thermal resistance and ruggedness suitable for short- and long-pulse applications. 

特性 Features

• 700 W internally pre-matched GaN-SiC HEMT covering a frequency range from 0.9 GHz to 1.4 GHz with internal stability network
• Low thermal resistance
• Excellent ruggedness
• High efficiency, short pulse reference designs at 960 MHz to 1215 MHz and 1030 MHz for avionics applications
• High efficiency, long pulse reference designs at 1.2 GHz to 1.4 GHz
• For RoHS compliance see the product details on the Ampleon website

简介

CLL3H0914LS-700属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的CLL3H0914LS-700晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。