CLF1G0035-100,112

包装：托盘 封装/外壳：SOT-467C 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 50V SOT467C

CLF1G0035-100

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

CLF1G0035-100

BroadbandRFpowerGaNHEMT

Generaldescription CLF1G0035-100andCLF1G0035S-100arebroadbandgeneralpurpose100W amplifierswithfirstgenerationGaNHEMTtechnologyfromAmpleon.Frequencyof operationisfromDCto3.5GHz. Featuresandbenefits FrequencyofoperationisfromDCto3.5GHz 100Wgeneralpurpo

CLF1G0035-100P

BroadbandRFpowerGaNHEMT

Generaldescription TheCLF1G0035-100PandCLF1G0035S-100Pare100Wgeneralpurposebroadband GaNHEMTsusablefromDCto3.5GHz. Featuresandbenefits FrequencyofoperationisfromDCto3.5GHz 100WgeneralpurposebroadbandRFPowerGaNHEMT Excellentruggedness(VSWR=10:1)