| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ABLEITSTROM-MESSGER횆TE | ASM-SENSOR ASM GmbH | ASM-SENSOR | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
BandpassFilter | MINIMini-Circuits 微型电路 | MINI | ||
BandpassFilter | MINIMini-Circuits 微型电路 | MINI | ||
Teck90600V,12GC#1214StrBC,XLPEInsM4,PVCJkt,AIAArmor,BlkPVCJkt,CSAHLSUNRES-40C ProductDescription Teck90600V,12+GConductor12+14AWG(7x20H)BareCopper,XLPEInsulationM4ColorCode,PVCInnerJacket,AluminumInterlockArmor,BlackPVC OuterJacket,CSAHLSUNRES-40C | BELDEN Belden Inc. | BELDEN | ||
ZENERDIODECHIPS •1N5518BTHRU1N5546BAVAILABLEINJANHCANDJANKCPERMIL-PRF-19500/437 •ZENERDIODECHIPS •ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE •ELECTRICALLYEQUIVALENTTO1N5518BTHRU1N5546B •0.5WATTCAPABILITYWITHPROPERHEATSINKING •COMPATIBLEWITHALLWIREBONDING | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
ZENERDIODE,500mW | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
ZENERDIODE,500mW | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
ZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
ZENERDIODE,500mW | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
ZENERDIODE,500mW | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
ZENERDIODE,500mW | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
详细参数
- 型号：
CKP5540
- 制造商：
TAPESWITCH CORP
- 功能描述：
Switch, Mat, 5 LB Switch Actuation, 36X48, 6 Inch Fail Safe Leads, Black
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CENKER |
23+ |
NA |
188 |
磁屏蔽电感 |
询价 |
相关规格书
更多- CKPA1BL-X
- CKR04BX100K
- CKR04BX100KS
- CKR04BX101K
- CKR04BX101M
- CKR04BX102KS
- CKR05BX100KM
- CKR05BX100KPV
- CKR05BX100KRV
- CKR05BX100KSTR1
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- CKR05BX104KSVTR1
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- CKR05BX104MRV
- CKR05BX331MMV
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- CKR05BX333MR
- CKR05BX390K
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- CKR05BX391KMV
- CKR05BX472MM
- CKR05BX472MP
- CKR05BX473KMV
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- CKR05BX473KPVTR1
- CKR05BX560K
- CKR05BX560KMV
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- CKR05BX560KS-ZAAAA
- CKR05BX561KM
- CKR05BX561KPVTR2
- CKR05BX561KRTR1
- CKR05BX561KS
- CKR05BX563KRV
- CKR05BX680K
- CKR05BX680KP
相关库存
更多- CKR
- CKR04BX100KR
- CKR04BX100M
- CKR04BX101KS
- CKR04BX102K
- CKR04BX102KSTR1
- CKR05BX100KMV
- CKR05BX100KR
- CKR05BX100KS
- CKR05BX100KSV
- CKR05BX100MMV
- CKR05BX104KS-SC
- CKR05BX104KSV
- CKR05BX104KSVTR2
- CKR05BX104MMV
- CKR05BX104MR
- CKR05BX331KSV
- CKR05BX332KM
- CKR05BX332KPV
- CKR05BX332KR
- CKR05BX332KS
- CKR05BX332KSV
- CKR05BX333MRV
- CKR05BX390KM
- CKR05BX390KR
- CKR05BX390KS
- CKR05BX391KM
- CKR05BX472KS
- CKR05BX472MMV
- CKR05BX472MR
- CKR05BX473KMVTR2
- CKR05BX473KPV
- CKR05BX473KR
- CKR05BX560KM
- CKR05BX560KR
- CKR05BX560KS
- CKR05BX560KSVTR1
- CKR05BX561K
- CKR05BX561KMV
- CKR05BX561KR
- CKR05BX561KRV
- CKR05BX561KSV
- CKR05BX563KSV
- CKR05BX680KM
- CKR05BX680KPV
