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CJT1201R5JJ

包装:散装 封装/外壳:矩形外壳 类别:电阻器 底座安装电阻器 描述:RES CHAS MNT 1.5 OHM 5% 120W

TEConnectivityPassiveProductTE Connectivity Passive Product

TE Connectivity Passive ProductTE ConnectivityPassiveProduct

APT1201R5BVFR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT1201R5BVFR

POWERMOSV

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching

ADPOW

Advanced Power Technology

APT1201R5BVR

N-ChannelMOSFET

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT1201R5BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT1201R5SVFR

POWERMOSV

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching

ADPOW

Advanced Power Technology

产品属性

  • 产品编号:

    CJT1201R5JJ

  • 制造商:

    TE Connectivity Passive Product

  • 类别:

    电阻器 > 底座安装电阻器

  • 系列:

    CJT, CGS

  • 包装:

    散装

  • 容差:

    ±5%

  • 功率 (W):

    120W

  • 成分:

    绕线

  • 温度系数:

    ±440ppm/°C

  • 涂层,外壳类型:

  • 安装特性:

    法兰

  • 大小 / 尺寸:

    7.480" 长 x 1.575" 宽(190.00mm x 40.00mm)

  • 高度 - 安装(最大值):

    0.787"(20.00mm)

  • 引线样式:

    导线引线

  • 封装/外壳:

    矩形外壳

  • 描述:

    RES CHAS MNT 1.5 OHM 5% 120W

供应商型号品牌批号封装库存备注价格
TE
20+
电阻器
93
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更多CJT1201R5JJ供应商 更新时间2024-9-24 14:15:00