Power Filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

文件：221.29 Kbytes 页数：4 Pages

JIANGSU

长电科技

TO-252 package design

文件：862.03 Kbytes 页数：7 Pages

STANSON

司坦森

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：131.1 Kbytes 页数：7 Pages

Samhop

三合微科

N-Channel MOSFET uses advanced trench technology

文件：1.42446 Mbytes 页数：5 Pages

DOINGTER

杜因特