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CIL21N100KBE

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

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未分类制造商

CIL21N100KAC

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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CIL21N100KAE

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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CIL21N100KBC

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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CIL21N100KNC

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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CIL21N100KNE

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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CIL21N100MAC

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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CIL21N100MAE

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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CIL21N100MBC

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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CIL21N100MBE

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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未分类制造商

CIL21N100MNC

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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未分类制造商

CIL21N100MNE

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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IXFK21N100F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

Features •RFCapableMOSFETs •DoubleMetalProcessforLowGateResistive •AvalancheRated •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters •Switch-ModeandResonant-ModePowerSupplies,>500kHzSwitching •D

IXYS

IXYS Integrated Circuits Division

IXFK21N100F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.50Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK21N100F

HiPerRFPowerMOSFETs

Features •RFCapableMOSFETs •DoubleMetalProcessforLowGateResistive •AvalancheRated •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters •Switch-ModeandResonant-ModePowerSupplies,>500kHzSwitching •D

IXYS

IXYS Integrated Circuits Division

IXFK21N100Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.50Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK21N100Q

HiPerFETPowerMOSFETsQ-CLASS

HiPerFET™PowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on

IXYS

IXYS Integrated Circuits Division

IXFN21N100Q

HiPerFETTMPowerMOSFETsQ-Class

SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •UnclampedInductiveSwitching(UIS)rated •LowRDS(on) •Fastintrinsicdiode •Int

IXYS

IXYS Integrated Circuits Division

IXFN21N100Q

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage -VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V APPLICATIONS ·Switchingapplication ·DC-DCconverters ·Batterychargers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFR21N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    CIL21N100KBE

  • 功能描述:

    It has ferrite and 100% Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

供应商型号品牌批号封装库存备注价格
92000
询价
Samsung
18+
999999
进口全新原装现货
询价
Samsung
23+
SMD
9868
专做原装正品,假一罚百!
询价
SAMSUNG-三星
24+25+/26+27+
车规-被动器件
96800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
Samsung
2017+
SMD
658951
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
SAMSUNG/三星
23+
SMD
63000
电感磁珠原厂原装深圳大量现货
询价
SAMSUNG/三星
22+
SMD
96000
原装现货样品可售
询价
三星
15+
0805
30875
现货-ROHO
询价
SAMSUNG
2016+
SMD
4000
只做原装,假一罚十,公司可开17%增值税发票!
询价
Samsung
19+
O805
67882
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
更多CIL21N100KBE供应商 更新时间2024-4-30 16:30:00