Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 50 mAmpere FEATURE * Small surface mounting type. (SC-88A/SOT-353) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * tow CHDTA144E chips in apackage. * Built in bias resistor(R1=10

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Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two CHDTA123J chips in a package. * Built in bias resistor(R1=2

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Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 50 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two CHDTA114E chips in a package. * Built in bias resistor(R1=10

文件：89.31 Kbytes 页数：3 Pages

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Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two CHDTA124E chips in a package. * Built in bias resistor(R1=2

文件：87.7 Kbytes 页数：3 Pages

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Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 30 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two CHDTA144E chips in a package. * Built in bias resistor(R1=47

文件：91.49 Kbytes 页数：3 Pages

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Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Both the CHDTA143T in one package. * Built in bias resistor(R1=

文件：114.56 Kbytes 页数：3 Pages

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Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 30 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * tow CHDTA144E chips in apackage. * Built in bias resistor(R1=47k

文件：88.39 Kbytes 页数：3 Pages

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Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two CHDTA114T chips in a package. * Built in bias resistor(R1=1

文件：108.21 Kbytes 页数：3 Pages

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Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 70 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two CHDTA114Y chips in a package. * Built in bias resistor(R1=10

文件：90.53 Kbytes 页数：3 Pages

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Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 30 mAmpere FEATURE * Small surface mounting type. (SC-88A/SOT353) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Both the CHDTA124E & CHDTC124E in one package. * Built in bi

文件：126.2 Kbytes 页数：4 Pages

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