Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 20 Volts CURRENT 6 Ampere P-channel: VOLTAGE 20 Volts CURRENT 4.3 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo moto

文件：322.86 Kbytes 页数：3 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 11 Ampere FEATURE * Small flat package. (SO-8 ) * Super High density cell design for extremely low RDS(ON). * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：260.519 Kbytes 页数：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 20 Ampere FEATURE ​​​​​​​* Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：200.41 Kbytes 页数：2 Pages

CHENMKO

力勤

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 13 Ampere FEATURE * Small flat package. ( TO-252A ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：184.65 Kbytes 页数：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 9.5 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：383.86 Kbytes 页数：3 Pages

CHENMKO

力勤

W-band Mixer

Description The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form. Main

文件：82.84 Kbytes 页数：6 Pages

UMS

W-band Mixer

Description The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form. Main

文件：82.84 Kbytes 页数：6 Pages

UMS

W-band Mixer

Description The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form. Main

文件：82.84 Kbytes 页数：6 Pages

UMS

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 20 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：200.45 Kbytes 页数：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 2.8 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：900.52 Kbytes 页数：3 Pages

CHENMKO

力勤