CHKA011aSXA中文资料130W Power Packaged Transistor数据手册UMS规格书

描述 Description

The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication.
The CHKA011aSXA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry.
It is proposed in ceramic metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.