PNP Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 30 mAmpere FEATURE * Small surface mounting type. (SOT-723) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated PNP transistors in one package. * Built in bias resi

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PNP Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 30 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated PNP transistors in one package. * Built in bias

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PNP Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated PNP transistors in one package. * Built in bi

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PNP Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated PNP transistors in one package. * Built in bi

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PNP Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated PNP transistors in one package. * Built in bi

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PNP Digital Silicon Transistor

FEATURE * Small surface mounting type. (SC-59/SOT346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated PNP transistors in one package. * Built in bias resistor(R1=220 Ω, Typ. ) APPLICATI

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PNP Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated PNP transistors in one package. * Built in bi

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PNP Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated PNP transistors in one package. * Built in bi

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PNP Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated PNP transistors in one package. * Built in bi

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NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated NPN transistors in one package. * Built in bi

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