IRF7303QPBF

HEXFETPowerMOSFET

IRF7303TR

DualN-ChannelMOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)50m(VGS=-10V) RDS(ON)80m(VGS=-4.5V) Features TheSOP-8hasbeenmodiedthroughacustomizec leadframeforenhancedthermalcharacteristic

IRF7303TR

DualN-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)

IRF7303TR

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF7303TRPBF

DualN-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100UISTested •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SetTopBox •LowCurrentDC/DC

IRF7303TRPBF-TP

DualN-ChannelEnhancementModePowerMOSFET

GENERALFEATURES @Ros(oN=35mO@VGS=10V ®Ros=45mO@VGS=4.5V ‘@SuperhighdensitycelldesignforextremelylowRos(oN) ®Exceptionalon-resistanceandmaximumDCcurent capability

MT7303A-UR

Marktech3mmUltraBrightRedLEDs

FEATURES •Excellenton/offcontrasts •Lowdrivecurrent •Highintensityredlightemission •Choiceoflenscolor •Availableintwomaterials •Canbepackagedontapeinareelorinabox

MT7303A-UR-A

ROUNDLEDLAMP

MT7303A-UR-A

UltraBrightLEDs

MT7303-UR

Marktech3mmUltraBrightRedLEDs

FEATURES •Excellenton/offcontrasts •Lowdrivecurrent •Highintensityredlightemission •Choiceoflenscolor •Availableintwomaterials •Canbepackagedontapeinareelorinabox