CGY2011G中文资料GSM 4 W power amplifiers数据手册恩XP规格书

描述 Description

GENERAL DESCRIPTION
The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power
amplifiers specifically designed to operate at 4.8 V battery supply. These ICs also include a power sensor driver so that no directional coupler is required in the power control loop.FEATURES
• Power Amplifier (PA) overall efficiency 45%
• 35.5 dB gain
• 0 dBm input power
• Gain control range 55 dB
• Integrated power sensor driver
• Low output noise floor of PA <−129 dBm/Hz in GSM RX band
• Wide operating temperature range−20 to +85°C
• LQFP 48 pin package
• Compatible with power ramping controller PCA5075
• Compatible with GSM RF transceiver SA1620.APPLICATIONS
• 880 to 915 MHz hand-held transceivers for E-GSM applications
• 900 MHz TDMA systems.

特性 Features

• Power Amplifier (PA) overall efficiency 45%
• 35.5 dB gain
• 0 dBm input power
• Gain control range 55 dB
• Integrated power sensor driver
• Low output noise floor of PA <−129 dBm/Hz in GSM RX band
• Wide operating temperature range−20 to +85°C
• LQFP 48 pin package
• Compatible with power ramping controller PCA5075
• Compatible with GSM RF transceiver SA1620.