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CGHV60075D5中文资料PDF规格书
CGHV60075D5规格书详情
Description
Wolfspeed’s CGHV60075D5 is a gallium nitride (GaN)
High Electron Mobility Transistor (HEMT). GaN has
superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher
saturated electron drift velocity, and higher thermal
conductivity. GaN HEMTs offer greater power density and
wider bandwidths compared to Si and GaAs transistors
Features
• 19 dB Typical Small Signal Gain at 4 GHz
• 17 dB Typical Small Signal Gain at 6 GHz
• 65 Typical Power Added Efficiency at 4 GHz
• 60 Typical Power Added Efficiency at 6 GHz
• 75 W Typical PSAT
• 50 V Operation
• High Breakdown Voltage
• Up to 6 GHz Operation
• Bare die are shipped in Gel-Pak® containers
• Non-adhesive tacky membrane immobilizes die during shipment
Applications
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CREE |
17+ |
SMD |
600 |
“芯达集团”专营军工百分之百原装进口 |
询价 | ||
Cree/Wolfspeed |
21+ |
Die |
13880 |
公司只售原装,支持实单 |
询价 | ||
CREE |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
Cree/Wolfspeed |
22+ |
Die |
9000 |
原厂渠道,现货配单 |
询价 | ||
CREE-科锐 |
24+25+/26+27+ |
车规-射频模块 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE |
22+ |
BGA |
10000 |
原装正品优势现货供应 |
询价 | ||
CREE |
2023+ |
全新原装 |
8700 |
原装现货 |
询价 | ||
CREE |
638 |
原装正品 |
询价 |