Description

Wolfspeed’s CGHV40180F is an unmatched, gallium nitride (GaN) high

electron mobility transistor (HEMT). The CGHV40180F, operating from a

50 volt rail, offers a general purpose, broadband solution to a variety of

RF and microwave applications. GaN HEMTs offer high efficiency, high

gain and wide bandwidth capabilities making the CGHV40180F ideal for

linear and compressed amplifier circuits. The transistor is available in a

2-lead flange package.

Features

• Up to 2.0 GHz Operation

• 24 dB Small Signal Gain at 900 MHz

• 20 dB Power Gain at 900 MHz

• 250 W Typical Output Power at 900 MHz

• 75 Efficiency at PSAT

Applications

• Military Communications

• Public Safety VHF-UHF applications

• Radar

• Medical

• Broadband Amplifiers

CGHV40180F属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。WOLFSPEED, INC.制造生产的CGHV40180F晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。