200 W, 2500-2700 MHz, GaN HEMT for LTE

文件：1.16049 Mbytes 页数：12 Pages

CREE

科锐

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD FOR CGHV27200

WOLFSPEED

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

文件：39.82 Kbytes 页数：8 Pages

NEC

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space application

文件：199.18 Kbytes 页数：10 Pages

RENESAS

瑞萨

DATABUS INTERFACE TRANSFORMERS LOW PROFILE SINGLE/DUAL

文件：214.66 Kbytes 页数：11 Pages

PMI