CGHV1J006D分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

CGHV1J006D属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的CGHV1J006D晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

描述 Description

Wolfspeed’s CGHV1J006D is a high voltage gallium nitride (GaN) High

Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using

a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers

superior high frequency, high efficiency features. It is ideal for a variety

of applications operating from 10 MHz to 18 GHz at 40 V with a high

breakdown voltage.

Large Signal Models Available for ADS and MWO

特性 Features

• 17 dB Typ. Small Signal Gain at 10 GHz

• 60 Typ. PAE at 10 GHz

• 6 W Typical PSAT

• 40 V Operation

• Up to 18 GHz Operation

Applications

• Satellite Communications

• PTP Communications Links

• Marine Radar

• Pleasure Craft Radar

• Port Vessel Traffic Services

• Broadband Amplifiers

• High Efficiency Amplifiers