丝印：CGD；Package：DSBGA；2.75-W FIXED GAIN MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER

1FEATURES 2· Maximize Battery Life and Minimize Heat – 0.5-mA Shutdown Current – 3-mA Quiescent Current – High Efficiency Class-D – 88% at 400mW at 8Ω – 80% at 100mW at 8Ω · Short Circuit Auto-recovery · Gain of 2 V/V (6dB) · Only One External Component Required – Internal Matche

文件：973.48 Kbytes 页数：22 Pages

TI

德州仪器

丝印：CGD；Package：DSBGA；2.75-W FIXED GAIN MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER

1FEATURES 2· Maximize Battery Life and Minimize Heat – 0.5-mA Shutdown Current – 3-mA Quiescent Current – High Efficiency Class-D – 88% at 400mW at 8Ω – 80% at 100mW at 8Ω · Short Circuit Auto-recovery · Gain of 2 V/V (6dB) · Only One External Component Required – Internal Matche

文件：973.48 Kbytes 页数：22 Pages

TI

德州仪器

丝印：CGD；Package：DSBGA；2.75-W FIXED GAIN MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER

1FEATURES 2· Maximize Battery Life and Minimize Heat – 0.5-mA Shutdown Current – 3-mA Quiescent Current – High Efficiency Class-D – 88% at 400mW at 8Ω – 80% at 100mW at 8Ω · Short Circuit Auto-recovery · Gain of 2 V/V (6dB) · Only One External Component Required – Internal Matche

文件：973.48 Kbytes 页数：22 Pages

TI

德州仪器

丝印：CGD；Package：DSBGA；2.75-W FIXED GAIN MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER

1FEATURES 2· Maximize Battery Life and Minimize Heat – 0.5-mA Shutdown Current – 3-mA Quiescent Current – High Efficiency Class-D – 88% at 400mW at 8Ω – 80% at 100mW at 8Ω · Short Circuit Auto-recovery · Gain of 2 V/V (6dB) · Only One External Component Required – Internal Matche

文件：973.48 Kbytes 页数：22 Pages

TI

德州仪器

丝印：CGD15FB45PRev2；Package：PCBA；Six Channel SiC MOSFET Driver Gate Driver for 1200V SiC MOSFET Power Module

文件：1.025319 Mbytes 页数：6 Pages

Cree

科锐

丝印：CGD15FB45PRev2；Package：PCBA；Six Channel SiC MOSFET Driver Gate Driver for 1200V SiC MOSFET Power Module

文件：1.025319 Mbytes 页数：6 Pages

Cree

科锐

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

1 GHz, 23 dB gain high output power doubler

General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. Features ■ High output power capability ■ Excellent linearity ■ Extremely low noise ■ Excellent ret

文件：51.63 Kbytes 页数：7 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP