800 to 900 MHz 30 dBm Power GaAs FET

Description The CFK2062-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +30 dBm. The device is easily matched and provides excellent linearity at 1 Watt. Manufactured in Celeritek’s p

文件：796.19 Kbytes 页数：5 Pages

MIMIX

800 to 900 MHz 30 dBm Power GaAs FET

Description The CFK2062-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +30 dBm. The device is easily matched and provides excellent linearity at 1 Watt. Manufactured in Celeritek’s p

文件：796.19 Kbytes 页数：5 Pages

MIMIX

2.3 to 2.5 GHz 30 dBm Power GaAs FET

Description The CFK2062-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +30 dBm. The device is easily matched and provides excellent linearity at 1 Watt. Manufactured in Celeritek’s

文件：258.1 Kbytes 页数：5 Pages

MIMIX

2.3 to 2.5 GHz 30 dBm Power GaAs FET

Description The CFK2062-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +30 dBm. The device is easily matched and provides excellent linearity at 1 Watt. Manufactured in Celeritek’s

文件：258.1 Kbytes 页数：5 Pages

MIMIX

800-900 MHz 30 dBm Power GaAs FET

文件：138.84 Kbytes 页数：4 Pages

MIMIX

800-900 MHz 30 dBm Power GaAs FET

文件：138.84 Kbytes 页数：4 Pages

MIMIX

800-900 MHz 30 dBm Power GaAs FET

文件：138.84 Kbytes 页数：4 Pages

MIMIX

1.8 to 2.0 GHz 30 dBm Power GaAs FET

文件：258.14 Kbytes 页数：5 Pages

MIMIX

1.8 to 2.0 GHz 30 dBm Power GaAs FET

文件：258.14 Kbytes 页数：5 Pages

MIMIX

1.8 to 2.0 GHz +30 dBm Power GaAs FET

Description\nThe CFK2062-P3 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +30 dBm. The device is easily matched and provides excellent linearity at 1 Watt. Manufactured in Celeritek’s pro ❏ High Gain\n❏ +30 dBm Power Output\n❏ Proprietary Power FET Process\n❏ 40% Linear Power Added Efficiency\n❏ Surface Mount SO-8 Power PackageApplications\n❏ PCS/PCN Base Stations and Terminals\n❏ Wireless Local Loop ;

CELERITEK