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High-Current Switching Applications Features • Adoption of FBET, MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be made small and slim (0.9mm). • High allowable power dissipat

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SANYO

三洋

Bipolar Transisitor -50V, -1A, Low VCE(sat) PNP Single CPH6

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Bipolar Transisitor -50V, -1A, Low VCE(sat) PNP Single CPH6

文件：283.32 Kbytes 页数：4 Pages

ONSEMI

安森美半导体