NTD4909N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=41A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTD4909N

PowerMOSFET30V,41A,SingleN?묬hannel,DPAK/IPAK

PE4909

TNCMaleConnectorSolderAttachmentForPE-SR401AL,PE-SR401FL,RG401

RN4909

SiliconPNPEpitaxialType(PCTProcess)SiliconNPNEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications ●IncludeingtwodevicesinUS6(ultrasuperminitypewith6leads) ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess

RN4909FE

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications •TwodevicesareincorporatedintoanExtreme-Super-Mini(6-pin)package. •Incorporatingabiasresistorintoatransistorreducespartscount.Reducingthepartscountenablesthemanufactureofevermorecompacte

SI4909DY

DualP-Channel40V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcomplianceplease seewww.vishay.com/doc?99912 APPLICATIONS •Loadswitches -NotebookPCs -DesktopPCs

SI4909DY

DualP-Channel40V(D-S)MOSFET

SI4909DY

DualP-Channel30-V(D-S)MOSFET

TGA4909

HighLinearityLNAGainBlock

TS4909

Dualmodelowpower150mWstereoheadphoneamplifierwithcapacitor-lessandsingle-endedoutputs

Description TheTS4909isastereoaudioamplifierdesignedtodriveheadphonesinportableapplications. Features ■Nooutputcouplingcapacitorsnecessary ■Pop-and-clicknoisereductioncircuitry ■OperatingfromVCC=2.2Vto5.5V ■Standbymodeactivelow ■Outputpower: –158mW@