GENERAL PURPOSE SILICON DIODES

FEATURES:• GENERAL PURPOSE SILICON DIODES• METALLURGICALLY BONDED

Microchip

微芯科技

GENERAL PURPOSE SILICON DIODES

• GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2mA/°C from 25ºC to 150ºC 1.0mA/°C from 150ºC to 175ºC Forward Current: 65

文件：32.84 Kbytes 页数：2 Pages

CDI-DIODE

Package：DO-213AA；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 250V 200MA DO213

MICROCHIP

微芯科技

NS486TMSXF Optimized 32-Bit 486-Class Controller with On-Chip Peripherals for Embedded Systems

文件：444.26 Kbytes 页数：44 Pages

NSC

国半

Silicon NPN Transistor RF High Frequency Amplifier

Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF large–signal applications required in industrial equipment. Features: • Specified 12.5V, 470MHz Characteristics: Output Power = 0.75W Minimum Gain = 8dB

文件：23.55 Kbytes 页数：2 Pages

NTE

PROGRAMMING MANUAL

PRODUCT OVERVIEW The ST 486 DX core is based on the design of the SGS-THOMSON standard 486 DX4 product. The core is capable of operating at the “external” bus speed or at two or three times the bus speed up to a maximum of 120MHz. Since the design is fully static the core can operate at any frequ

文件：156.54 Kbytes 页数：34 Pages

STMICROELECTRONICS

意法半导体