GENERAL PURPOSE SILICON DIODES

• GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2mA/°C from 25ºC to 150ºC 1.0mA/°C from 150ºC to 175ºC Forward Current: 65

文件：32.84 Kbytes 页数：2 Pages

CDI-DIODE

Diode and Rectifier Devices

FEATURES:• GENERAL PURPOSE SILICON DIODES• METALLURGICALLY BONDED

Microchip

微芯科技

Package：DO-213AA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 80V 200MA DO213AA

MICROCHIP

微芯科技

Infrared Emitting Diode

■ Features 1. Narrow beam angle (∆θ : TYP. ± 13˚) 2. Radiant flux ( Φ e : MIN. 0.7mW at I F = 20mA) 3. Compact, high reliability by chip coating (GL480Q/GL483Q ) 4. Long lead type (GL483Q) ■ Applications 1. Copiers 2. Floppy disk drives 3. Optoelectronic switches

文件：45.38 Kbytes 页数：4 Pages

SHARPSharp Corporation

夏普

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz

Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology (Tuned Q) to increase bandwidth and power gain over the complete range of 806–866MHz. Features: • Designe

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NTE

Enhanced Low EMI Half-Duplex RS-485 Transceiver

DESCRIPTION The SP483E is a half-duplex transceiver that meets the specifications of RS-485 and RS-422 serial protocols with enhanced ESD performance. ■ +5V Only ■ Low Power BiCMOS ■ Driver/Receiver Enable for Multi-Drop configurations ■ Enhanced ESD Specifications: +15KV Human Body M

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SIPEX