| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
CDE9220DG | 92 Series Comms And Network Enclosure Productoverview Lowprofileanddeepprofileplastichousingswith removableendpanels.Idealforcommunication equipmentsuchasWi-Firouters. •StylishlydesignedABSplasticcasewithdouble detachablepanels •FlameresistantABS(UL94-V0),30sizes, availableinoff-whiteandda | CAMDENBOSS CamdenBoss Ltd. | CAMDENBOSS | |
High-PerformanceDual-ChannelDC-DCConverter | Dialog Dialog Semiconductor | Dialog | ||
High-PerformanceDual-ChannelDC-DCConverter KeyFeatures ■2.5Vto5.5Vinputvoltage ■0.3Vto1.9Voutputvoltage ■4MHznominalswitchingfrequency ■±1accuracy(static) ■±5accuracy(dynamic) ■I2C-compatibleinterface(FM+) ■ProgrammableGPIOs ■Programmablesoft-start ■Voltage,current,andtemperature supervision | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
PChannelPowerMOSFET | GSG Gunter Seniconductor GmbH. | GSG | ||
FrequencySynthesizer | SHOULDERShoulder 好达电子无锡市好达电子股份有限公司 | SHOULDER | ||
built-inMOS,Y,9Aconverter ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
ProgrammableRambusTMXDRTMClockGenerator | IDT Integrated Device Technology, Inc. | IDT | ||
ProgrammableRambusTMXDRTMClockGenerator | IDT Integrated Device Technology, Inc. | IDT | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
0.6A,200V,1.500Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-0.56A) HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPowerMOSFET HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling ●Lead-Free | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRe | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
P-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
-2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs -2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforappl | Intersil Intersil Corporation | Intersil |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HRS/广濑 |
23+ |
NA/原装 |
9390 |
代理-优势-原装-正品-现货*期货 |
询价 | ||
HIROSE |
24+ |
con |
100 |
现货常备产品原装可到京北通宇商城查价格https://www.jbchip.com/index |
询价 | ||
HRS/广濑 |
2420+ |
/ |
365663 |
一级代理,原装正品! |
询价 | ||
HIROSE |
2306+ |
NA |
6680 |
原装正品公司现货,实单来谈 |
询价 | ||
AMIS |
2339+ |
QFP-44 |
5650 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
AMIS |
20+ |
MQFP44 |
500 |
样品可出,优势库存欢迎实单 |
询价 | ||
CDE |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 |
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