丝印：CM085B；Package：TSSOP；CMOS Dual 2-Wide 2-Input AND-OR-INVERT Gate

Features: Medium-speed operation — tpyy = 90 ns; tp * 125 ns (typ.) at 10 V . Individual inhibit controls Standardized symmetrical output characteristics 100% tested for quiescent current at 20 V 8 Maximum input current of 1 uA at 18 V over full package- temperature range; 100 nA at

文件：938.91 Kbytes 页数：20 Pages

TI

德州仪器

Dual 2-wide 2-input AND-OR-invert gate

DESCRIPTION The HEF4085B is a dual 2-wide 2-input AND-OR-invert gate, each with an additional input (A4 or B4) which can be used as either an expander input or an inhibit input. A HIGH on A4 or B4 forces the output (OA or OB) LOW independent of the other inputs (A0 to A3 or B0 to B3). The outputs

文件：29.11 Kbytes 页数：3 Pages

PHI

PHI

VTP Process Photodiodes

PRODUCT DESCRIPTION Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time.

文件：31.82 Kbytes 页数：1 Pages

PERKINELMER

VTP Process Photodiodes

PRODUCT DESCRIPTION Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time.

文件：31.82 Kbytes 页数：1 Pages

PERKINELMER