丝印：CM023B；Package：TSSOP；CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

文件：1.0201 Mbytes 页数：23 Pages

TI

德州仪器

Triple 3-input NAND gate

DESCRIPTION The HEF4023B provides the positive triple 3-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

文件：25.06 Kbytes 页数：3 Pages

PHI

PHI

Triple 3-input NAND gate

DESCRIPTION The HEF4023B provides the positive triple 3-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

文件：25.06 Kbytes 页数：3 Pages

PHI

PHI

Triple 3-input NAND gate

DESCRIPTION The HEF4023B provides the positive triple 3-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

文件：25.06 Kbytes 页数：3 Pages

PHI

PHI