CD4023BMS中文资料瑞萨数据手册PDF规格书

特性 Features

• High-Voltage Types (20V Rating)

• Propagation Delay Time = 60ns (typ.) at CL = 50pF,

VDD = 10V

• Buffered Inputs and Outputs

• Standardized Symmetrical Output Characteristics

• Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC

• 100 Tested for Maximum Quiescent Current at 20V

• 5V, 10V and 15V Parametric Ratings

• Noise Margin (Over Full Package Temperature Range):

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• Meets All Requirements of JEDEC Tentative Standards

No. 13B, “Standard Specifications for Description of

“B” Series CMOS Device’s

描述 Description

CD4011BMS, CD4012BMS, and CD4023BMS NAND gates

provide the system designer with direct implementation of

the NAND function and supplement the existing family of

CMOS gates. All inputs and outputs are buffered.

The CD4011BMS, CD4012BMS and the CD4023BMS is

supplied in these 14 lead outline packages:

CD4011BMS - Quad 2 Input

CD4012BMS - Dual 4 Input

CD4023BMS - Triple 3 Input

CD4011B CD4012B CD4023B

Braze Seal DIP H4Q H4H H4Q

Frit Seal DIP H1B H1B H1B

Ceramic Flatpack H3W H3W H3W