NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. FEATURES: • Pg = 10 dB min. @ 960 MHz • P1dB = 1.0 Watts min. at 960 MHz • Omnigold™ Metalization System

文件：18.68 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI CBSL100 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. FEATURES: • Internal Input/Output Matching Network • PG = 9.0 dB at 100 W/ 960 MHz • Omnigold™ Metalization System

文件：17.64 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI CBSL15 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. FEATURES: • Internal Input Matching Network • PG =8.0 dB at 15 W/960 MHz • Omnigold™ Metalization System

文件：18.09 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. FEATURES: • Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz • Omnigold™ Metalization System

文件：18.31 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI CBSL1SL is Designed for Class A, Cellular Base Staion Applications up to 960 MHz. FEATURES: • Class A Operation • PG = 10 dB at 1.0 W/960 MHz • Omnigold™ Metalization System

文件：15.98 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

文件：18.4 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

文件：18.4 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

文件：18.8 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

文件：18.8 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor