CEM0410

SingleN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,3.4A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM0410

N-ChannelMOSFETusesadvancedtrenchtechnology

CEM0410

SingleN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,3.4A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM0410SL

SingleN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,3.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=165mW@VGS=3V. RDS(ON)=130mW@VGS=5V.

CEZC0410SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,10A,RDS(ON)=120mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=130mW@VGS=5V. RDS(ON)=165mW@VGS=3V.

CHA0410

XLamp®CHA0410LED

FEATURES •4.2‑mmopticalsource •Availablein80-,90‑and95‑minimum CRIoptions •EasyWhite®2-and3‑stepbinning •PremiumColor2-and3-stepbinning •Forwardvoltageoptions:12‑Vclass& 36‑Vclass •85°Cbinningandcharacterization •Maximumdrivecurrent:900mA(12V), 300

CHA0410

XLamp®CHA0410Pro9™LED

FEATURES •4.2‑mmopticalsource •Availablein90and95CRIminimumoptions •EasyWhite®2-and3‑stepbinning •PremiumColor3-stepbinning •Forwardvoltageoptions:12‑Vclass&36‑Vclass •85°Cbinningandcharacterization •Maximumdrivecurrent:900mA(12V),300mA(36V) •11

CRO0410A-LF

Voltage-ControlledOscillator

CRO0410A-LF

Voltage-ControlledOscillatorSurfaceMountModule

CSHB0410

MoldingPowerChoke

Features： ▪Corematerial:Alloypowder ▪Coreandwindingloss: Seehttps://www.codaca.com/DesignTool_Power-Inductor-Loss- Comparison.html ▪Enviromental:RoHS,Reachcompliant,Halogenfree ▪Weight:0.19g ▪MoistureSensitivity:Level(MSL)1 (unlimitedfloorlifeat5～40℃,RH≤70relative