CBB032M12FM3T中文资料WOLFSPEED数据手册PDF规格书

Technical Features

• Ultra-Low Loss

• High Frequency Operation

• Zero Turn-Off Tail Current from MOSFET

• Normally-Off, Fail-Safe Device Operation

• Optional Pre-Applied Thermal Interface Material

Applications

• DC-DC Converters

• EV Chargers

• High-Efficiency Converters / Inverters

• Renewable Energy

• Smart-Grid / Grid-Tied Distributed Generation

1200 V, 32 mΩ, Silicon Carbide, Full-Bridge Module

VDS 1200 V

RDS(on) 32 mΩ

System Benefits

• Enables Compact, Lightweight Systems

• Increased System Efficiency, due to Low Switching

& Conduction Losses of SiC

• Reduced Thermal Requirements and System Cost