CAV93C76VE-GT3集成电路（IC）的存储器规格书PDF中文资料

CAV93C76VE-GT3属于集成电路（IC）的存储器。由安森美半导体制造生产的CAV93C76VE-GT3存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The CAV93C76 is an EEPROM Serial 8−Kb Microwire

Automotive Grade 1 device, which is configured as either registers of

16 bits (ORG pin at VCC or Not Connected) or 8 bits (ORG pin at

GND). Each register can be written (or read) serially by using the DI

(or DO) pin. The CAV93C76 is manufactured using ON

Semiconductor’s advanced CMOS EEPROM floating gate

technology. The device is designed to endure 1,000,000 program/erase

cycles and has a data retention of 100 years. The device is available in

8−pin SOIC and TSSOP packages.

特性 Features

• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified

• High Speed Operation: 2 MHz

• 2.5 V to 5.5 V Supply Voltage Range

• Selectable x8 or x16 Memory Organization

• Self−timed Write Cycle with Auto−clear

• Software Write Protection

• Power−up Inadvertant Write Protection

• Low Power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• Sequential Read

• 8−pin SOIC and TSSOP Packages

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

Compliant†